Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
acceptor-type doping — akceptorinis legiravimas statusas T sritis radioelektronika atitikmenys: angl. acceptor type doping; p type doping vok. Dotierung von Akzeptoren, f; p Dotierung, f rus. легирование акцепторной примесью, n pranc. dopage type p, m … Radioelektronikos terminų žodynas
donor-type doping — donorinis legiravimas statusas T sritis radioelektronika atitikmenys: angl. donor type doping; n type doping vok. Dotierung von Donatoren, f; n Dotierung, f rus. легирование донорной примесью, n pranc. dopage type n, m … Radioelektronikos terminų žodynas
n-type doping — donorinis legiravimas statusas T sritis radioelektronika atitikmenys: angl. donor type doping; n type doping vok. Dotierung von Donatoren, f; n Dotierung, f rus. легирование донорной примесью, n pranc. dopage type n, m … Radioelektronikos terminų žodynas
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
doping impurity type — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
type d'impureté dopante — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
type de dopage — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
Doping at the 2007 Tour de France — Part of a series on Doping in sport … Wikipedia
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
P-type semiconductor — A P type semiconductor (P for Positive) is obtained by carrying out a process of doping: that is, adding a certain type of atoms to the semiconductor in order to increase the number of free charge carriers (in this case positive holes). When the… … Wikipedia
